7 June 1996 Image and resist profile by sublayer variation in deep-UV lithography
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Abstract
In order to make next generation ultra large scale integrated circuits, we have to form sub- quarter micron patterns. Among the several lithographic choices, the enhanced optical lithography techniques of using deep UV sources are strong candidates. The aerial image study shows the combination of annular illumination, binary intensity mask and pupil filter can be applied to all kinds of patterns. This optimum combination is applied to the resist profile study to find out the process latitude. We also investigated the process latitude variation by changing the sublayers such as anti-reflection coating, polysilicon, oxide and nitride.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hye-Keun Oh, So-Yeon Baek, Seung-Wook Park, Kun-Sang Lee, "Image and resist profile by sublayer variation in deep-UV lithography", Proc. SPIE 2726, Optical Microlithography IX, (7 June 1996); doi: 10.1117/12.240960; https://doi.org/10.1117/12.240960
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