7 June 1996 Improvement of resist pattern fidelity with partial attenuated phase-shift mask
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To improve resist pattern fidelity, partial attenuated phase-shift mask (PA PSM) was developed. On this mask, some portions of opaque regions were changed to attenuated phase- shift regions. The performances of two PA PSMs (8 percent and 13 percent transmittance) were evaluated by using an NA equals 0.6, annular illumination i-line stepper. Resist pattern shortening of longer side was alleviated to the half of a conventional mask, and corner rounding was also improved without deteriorating process margin. Moreover, the width of attenuated region did not have much effect on the resist pattern size; almost the same pattern length was obtained with any phase shifted region width (0.2 approximately 0.4micrometers ). Therefore, we have a large process margin in this mask fabrication. Moreover, KrF PA PSM (7 percent transmittance) was fabricated and evaluated. The same effect was confirmed in KrF excimer laser lithography. In conclusion, PA PSM is a very promising technique for precise pattern formation.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tadao Yasuzato, Tadao Yasuzato, Shinji Ishida, Shinji Ishida, Kunihiko Kasama, Kunihiko Kasama, } "Improvement of resist pattern fidelity with partial attenuated phase-shift mask", Proc. SPIE 2726, Optical Microlithography IX, (7 June 1996); doi: 10.1117/12.240947; https://doi.org/10.1117/12.240947


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