7 June 1996 Photolithography using the AERIAL illuminator in a variable-NA wafer stepper
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Abstract
This paper shows the suitabilily of i-line photolithography for production at 0.30 tm. The process performance is demonstrated through the use of off-axis illumination, high NA projection lens, and a state of the art photoresist system. The minimum required depth of focus for a suitable 0.30 tm process is derived as 0.95 tm over at least a 10% process window. This will result in a 0.60 m common corridor over a square 22 mm imaging feId. In addition to the dense and isolated lines, a preliminary investigation of contact hole performance using chrome and phase shift masks was completed.
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Richard Rogoff, Guy Davies, Jan Mulkens, Jos de Klerk, Peter van Oorschot, Gabriele Kalmbach, Johannes Wangler, Wolfgang Rupp, "Photolithography using the AERIAL illuminator in a variable-NA wafer stepper", Proc. SPIE 2726, Optical Microlithography IX, (7 June 1996); doi: 10.1117/12.240954; https://doi.org/10.1117/12.240954
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