7 June 1996 Photolithography using the AERIAL illuminator in a variable-NA wafer stepper
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This paper shows the suitabilily of i-line photolithography for production at 0.30 tm. The process performance is demonstrated through the use of off-axis illumination, high NA projection lens, and a state of the art photoresist system. The minimum required depth of focus for a suitable 0.30 tm process is derived as 0.95 tm over at least a 10% process window. This will result in a 0.60 m common corridor over a square 22 mm imaging feId. In addition to the dense and isolated lines, a preliminary investigation of contact hole performance using chrome and phase shift masks was completed.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Richard Rogoff, Richard Rogoff, Guy Davies, Guy Davies, Jan Mulkens, Jan Mulkens, Jos de Klerk, Jos de Klerk, Peter van Oorschot, Peter van Oorschot, Gabriele Kalmbach, Gabriele Kalmbach, Johannes Wangler, Johannes Wangler, Wolfgang Rupp, Wolfgang Rupp, } "Photolithography using the AERIAL illuminator in a variable-NA wafer stepper", Proc. SPIE 2726, Optical Microlithography IX, (7 June 1996); doi: 10.1117/12.240954; https://doi.org/10.1117/12.240954

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