7 June 1996 Sub-quarter-micrometer contact hole fabrication using annular illumination
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Details of an experimental demonstration of a contact hole imaging system are reported in which the depth of focus is increased by a factor of about 3.5 using annular illumination. Due to spatial filtering and nonlinearity of the photoresist, the resolving power was enhanced by 52 percent and it was possible to pattern a 0.28 micrometers contact hole in photoresist deposited on a silica substrate. This technique is capable of fabrication sub-quarter micron holes using excimer laser radiation at 193 nm.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Miklos Erdelyi, Miklos Erdelyi, Zsolt Bor, Zsolt Bor, Gabor Szabo, Gabor Szabo, Joseph R. Cavallaro, Joseph R. Cavallaro, Michael C. Smayling, Michael C. Smayling, Frank K. Tittel, Frank K. Tittel, William L. Wilson, William L. Wilson, "Sub-quarter-micrometer contact hole fabrication using annular illumination", Proc. SPIE 2726, Optical Microlithography IX, (7 June 1996); doi: 10.1117/12.240953; https://doi.org/10.1117/12.240953


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