7 June 1996 Top-surface imaging and optical proximity correction: a way to 0.18-um lithography at 248 nm
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Proceedings Volume 2726, Optical Microlithography IX; (1996); doi: 10.1117/12.240910
Event: SPIE's 1996 International Symposium on Microlithography, 1996, Santa Clara, CA, United States
Abstract
We present a description of a software tool and a methodology for easily creating photoresist development rate parameters in lithography simulation. The tool optimizes parameters using the modified simplex method. The methodology uses the tool to provide insight into the effects of the development rate parameters and to find usable parameters quickly. The reasoning behind the methodology are discussed as well as advantages and disadvantages. Results from three different lithography simulators are shown to agree well with experimental cross-section SEM data.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Anne-Marie Goethals, J. Vertommen, Frieda Van Roey, Anthony Yen, Alexander V. Tritchkov, Kurt G. Ronse, Rik M. Jonckheere, Luc Van den Hove, "Top-surface imaging and optical proximity correction: a way to 0.18-um lithography at 248 nm", Proc. SPIE 2726, Optical Microlithography IX, (7 June 1996); doi: 10.1117/12.240910; https://doi.org/10.1117/12.240910
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KEYWORDS
Optical proximity correction

Anisotropy

Lithography

Photoresist processing

Deep ultraviolet

Image processing

Reticles

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