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7 June 1996 Viability of conventional high-NA KrF imaging for sub-0.25-um lithography
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As the competitive pressures of the semiconductor industry drive to feature sizes below 250 nanometer, unconventional imaging approaches are being considered in order to preserve the cost effectiveness of optical lithography. To achieve minimum feature size with a usable process window, phase shift masks, off-axis illumination, and ArF lithography have been investigated with varying degrees of success. Unfortuanely, the maturity and flexibility of such techniques are questionable at this time. This paper investigates the extendibilty of traditional imaging approaches for use in the sub 250 nanometer regime. Aerial image simulations were used to set expectation levels by increasing lens numerical aperture versus prior state of the art exposure systems. Experimental data was then generated with an advanced 0.6 NA excimer laser based step and scan exposure system. Single point per field comparisons are made between simulations and experimental data covering linearity, depth of focus, and exposure dose window for feature sizes between 250 nanometers and 200 nanometers. In addition, data reviewing the ability to extend such performance across a 25 mm by 33 mm field size is reviewed.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Timothy R. Farrell, Ronald Nunes, Robert Campbell, Peter Hoh, Donald J. Samuels, Joseph P. Kirk, Will Conley, Junichiro Iba, and Tsuyoshi Shibata "Viability of conventional high-NA KrF imaging for sub-0.25-um lithography", Proc. SPIE 2726, Optical Microlithography IX, (7 June 1996);

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