7 June 1996 Wafer and chip deformation caused by pattern transfer
Author Affiliations +
In this paper, we have investigated the deformation of wafers and chips caused by Si3N4 film deposition and pattern transfer on Si wafer substrates using experiments and finite element analysis simulations. From the experimental results, the wafer deformation is non- linearly dependent on transferred patterns, and the difference between the chip deformation of the x-axis component and that of the y-axis component when L/S patterns are transferred is as much as 10-nm under the experimental conditions. The simulated results also show that pattern displacement depends on the total film area ratio in a chip, the size of the transferred pattern area and its position. In order to suppress wafer deformation when using a 300-mm- (phi) wafer smaller than that of 200-mm-(phi) wafer, it was found that the wafer thickness should be 1.5 times thicker than 200-mm-(phi) wafer.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Akira Imai, Akira Imai, Norio Hasegawa, Norio Hasegawa, Shinji Okazaki, Shinji Okazaki, Kouichi Sakaguchi, Kouichi Sakaguchi, "Wafer and chip deformation caused by pattern transfer", Proc. SPIE 2726, Optical Microlithography IX, (7 June 1996); doi: 10.1117/12.240975; https://doi.org/10.1117/12.240975


450mm lithography status for high volume manufacturing
Proceedings of SPIE (March 23 2017)
Technology acceleration: the suppliers' challenge
Proceedings of SPIE (July 01 2003)
Pattern transfer process development for EUVL
Proceedings of SPIE (April 01 2009)
Study of shape evaluation for mask and silicon using large...
Proceedings of SPIE (September 24 2010)
Effect Of Plastic Deformation Of Silicon Wafers On Overlay
Proceedings of SPIE (August 07 1977)
Image Matching: A Method For Overlay Error Reduction
Proceedings of SPIE (November 06 1983)
Lithography yield check for IC design
Proceedings of SPIE (May 04 2005)

Back to Top