7 June 1996 Wafer and chip deformation caused by pattern transfer
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Abstract
In this paper, we have investigated the deformation of wafers and chips caused by Si3N4 film deposition and pattern transfer on Si wafer substrates using experiments and finite element analysis simulations. From the experimental results, the wafer deformation is non- linearly dependent on transferred patterns, and the difference between the chip deformation of the x-axis component and that of the y-axis component when L/S patterns are transferred is as much as 10-nm under the experimental conditions. The simulated results also show that pattern displacement depends on the total film area ratio in a chip, the size of the transferred pattern area and its position. In order to suppress wafer deformation when using a 300-mm- (phi) wafer smaller than that of 200-mm-(phi) wafer, it was found that the wafer thickness should be 1.5 times thicker than 200-mm-(phi) wafer.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Akira Imai, Akira Imai, Norio Hasegawa, Norio Hasegawa, Shinji Okazaki, Shinji Okazaki, Kouichi Sakaguchi, Kouichi Sakaguchi, "Wafer and chip deformation caused by pattern transfer", Proc. SPIE 2726, Optical Microlithography IX, (7 June 1996); doi: 10.1117/12.240975; https://doi.org/10.1117/12.240975
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