7 June 1996 Xe2 excimer lamp (172 nm) for optical lithography
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Abstract
A Xe2 excimer lamp (172 nm) has been used for submicrometer patterning of photoresist films. We resolved 0.35 micrometers lines and spaces using a contact printing system. We exposed a chemically amplified photoresist customized for ArF. The sensitivity of the photoresist was 130 mJ/cm$=2) or about ten times smaller than the sensitivity for ArF.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hiroyoshi Tanabe, Hiroyoshi Tanabe, Yuko Seki, Yuko Seki, Jun-ichi Yano, Jun-ichi Yano, Jun Ushioda, Jun Ushioda, Yukio Ogura, Yukio Ogura, } "Xe2 excimer lamp (172 nm) for optical lithography", Proc. SPIE 2726, Optical Microlithography IX, (7 June 1996); doi: 10.1117/12.240967; https://doi.org/10.1117/12.240967
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