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5 February 1996 Anisotropy of the optical constants in the layer plane of GaTe single crystals
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Proceedings Volume 2730, Second Iberoamerican Meeting on Optics; (1996) https://doi.org/10.1117/12.231025
Event: Second Iberoamerican Meeting on Optics, 1995, Guanajuato, Mexico
Abstract
Optical anisotropy in the refractive index and in the absorption coefficient of GaTe has been studied in the layer plane. The refractive index has been determined in the wavelength range from 0.7 to 25 micrometer and the absorption coefficient in the range of energies from 1.6 to 2 eV. The refractive index dispersion is interpreted through Phillips-Van Vechten and Lorent- Drude models, yielding values of the Penn gap of Epg (perpendicular b) equals 3.37 eV and Epg (parallel b) equals 3.58 eV. The absorption coefficient has been found to be very slightly anisotropic, which is shown to be coherent with the Se pz-like character of the valence band.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. F. Sanchez-Royo, Agustin Segura Vives, V. Munoz, and Miguel V. Andres "Anisotropy of the optical constants in the layer plane of GaTe single crystals", Proc. SPIE 2730, Second Iberoamerican Meeting on Optics, (5 February 1996); https://doi.org/10.1117/12.231025
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