Electronic structure of (211) AlAs/GaAs superlattices

J. Arriaga; D. A. Contreras-Solorio

doi:10.1117/12.231022

5 February 1996 Electronic structure of (211) AlAs/GaAs superlattices

J. Arriaga, D. A. Contreras-Solorio

Proceedings Volume 2730, Second Iberoamerican Meeting on Optics; (1996) https://doi.org/10.1117/12.231022
Event: Second Iberoamerican Meeting on Optics, 1995, Guanajuato, Mexico

Abstract

The electronic structure of (211) AlAs/GaAs superlattices at the (Gamma) point of the superlattice is studied for (2,2) less than or equal to (n,m) less than or equal to (20,20), where n(m) is the number of principal layers of AlAs (GaAs). The calculations are based on a sp³s^* empirical tight-binding model and on a surface green-function matching analysis. The evolution of the energy gap versus the variation of n and m, and the confinement of the different states are discussed. Also, the orbital character of the wave functions is studied.

Citation Download Citation

J. Arriaga and D. A. Contreras-Solorio "Electronic structure of (211) AlAs/GaAs superlattices", Proc. SPIE 2730, Second Iberoamerican Meeting on Optics, (5 February 1996); https://doi.org/10.1117/12.231022

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