Real-time optical diagnostics for epitaxial growth

David E. Aspnes; Itaru Kamiya

doi:10.1117/12.231087

5 February 1996 Real-time optical diagnostics for epitaxial growth

David E. Aspnes, Itaru Kamiya

Proceedings Volume 2730, Second Iberoamerican Meeting on Optics; (1996) https://doi.org/10.1117/12.231087
Event: Second Iberoamerican Meeting on Optics, 1995, Guanajuato, Mexico

Abstract

Various optical techniques have been developed over the last few years for real-time analysis of surfaces and near-surface regions of semiconductor epitaxy. These techniques are providing insights into microscopic mechanisms of epitaxy and opportunities for sample-driven closed- loop feedback control of the epitaxial growth process. Both aspects are expected to become increasingly important as device complexity increases and tolerances become more stringent. Examples are provided and opportunities discussed.

Citation Download Citation

David E. Aspnes and Itaru Kamiya "Real-time optical diagnostics for epitaxial growth", Proc. SPIE 2730, Second Iberoamerican Meeting on Optics, (5 February 1996); https://doi.org/10.1117/12.231087

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