5 February 1996 Real-time optical diagnostics for epitaxial growth
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Proceedings Volume 2730, Second Iberoamerican Meeting on Optics; (1996); doi: 10.1117/12.231087
Event: Second Iberoamerican Meeting on Optics, 1995, Guanajuato, Mexico
Abstract
Various optical techniques have been developed over the last few years for real-time analysis of surfaces and near-surface regions of semiconductor epitaxy. These techniques are providing insights into microscopic mechanisms of epitaxy and opportunities for sample-driven closed- loop feedback control of the epitaxial growth process. Both aspects are expected to become increasingly important as device complexity increases and tolerances become more stringent. Examples are provided and opportunities discussed.
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David E. Aspnes, Itaru Kamiya, "Real-time optical diagnostics for epitaxial growth", Proc. SPIE 2730, Second Iberoamerican Meeting on Optics, (5 February 1996); doi: 10.1117/12.231087; https://doi.org/10.1117/12.231087
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KEYWORDS
Gallium arsenide

Dielectrics

Reflectivity

Light scattering

Epitaxy

Gallium

Semiconductors

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