19 January 1996 Scanning probe microscope study of obliquely evaporated SiOx and its indium-tin-oxide underlayer for the alignment of ferroelectric liquid crystals
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Proceedings Volume 2731, International Liquid Crystal Workshop on Surface Phenomena; (1996) https://doi.org/10.1117/12.230643
Event: International Liquid Crystal Workshop: Surface Phenomena, 1995, St. Petersburg, Russian Federation
Abstract
Atomic Force Microscope images of obliquely evaporated SiOx onto indium-tin-oxide (ITO) thin film electrodes as used in liquid crystal displays show no pronounced regular structure of the SiOx thin films as used in theoretical approaches to explain the alignment of liquid crystals. Subsequent investigation of the morphology of the ITO surface using scanning tunneling microscopy shows that this surface is rough on many scales and shows step heights as large as 0.1 micrometers . Based on these observations we suggest two mechanisms which might be responsible for the liquid crystal alignment and methods for improving alignment.
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Georg K.H. Bodammer, James D. Gourlay, David G. Vass, William J. Hossack, "Scanning probe microscope study of obliquely evaporated SiOx and its indium-tin-oxide underlayer for the alignment of ferroelectric liquid crystals", Proc. SPIE 2731, International Liquid Crystal Workshop on Surface Phenomena, (19 January 1996); doi: 10.1117/12.230643; https://doi.org/10.1117/12.230643
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