Attainment of high D* at room temperature via gate-modulated detector interface

Lester J. Kozlowski; Kadri Vural; William E. Kleinhans; T. Liu; Gregory H. Olsen; Marshall J. Cohen

doi:10.1117/12.243538

26 June 1996 Attainment of high D* at room temperature via gate-modulated detector interface

Lester J. Kozlowski, Kadri Vural, William E. Kleinhans, T. Liu, Gregory H. Olsen, Marshall J. Cohen

Proceedings Volume 2745, Infrared Readout Electronics III; (1996) https://doi.org/10.1117/12.243538
Event: Aerospace/Defense Sensing and Controls, 1996, Orlando, FL, United States

Abstract

We report the performance of InGaAs and HgCdTe FPAs using multiplexing readouts having gate modulated interface to the infrared detectors. Gate modulation enables extremely high sensitivity via self-adjusting current gain and concomitant high transimpedance. At operating temperatures where the detector current was dominated by photocurrent, gate modulation current gain is > 40,000 and yield input- referred read noise of < 2 e-. Key highlights include D^* exceeding 10¹³ Jones at room temperature and 10¹⁶ Jones at 170 K with a 1.68 micrometers InGaAs FPA.

Citation Download Citation

Lester J. Kozlowski, Kadri Vural, William E. Kleinhans, T. Liu, Gregory H. Olsen, and Marshall J. Cohen "Attainment of high D* at room temperature via gate-modulated detector interface", Proc. SPIE 2745, Infrared Readout Electronics III, (26 June 1996); https://doi.org/10.1117/12.243538

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