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26 June 1996 Attainment of high D* at room temperature via gate-modulated detector interface
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Abstract
We report the performance of InGaAs and HgCdTe FPAs using multiplexing readouts having gate modulated interface to the infrared detectors. Gate modulation enables extremely high sensitivity via self-adjusting current gain and concomitant high transimpedance. At operating temperatures where the detector current was dominated by photocurrent, gate modulation current gain is > 40,000 and yield input- referred read noise of < 2 e-. Key highlights include D* exceeding 1013 Jones at room temperature and 1016 Jones at 170 K with a 1.68 micrometers InGaAs FPA.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Lester J. Kozlowski, Kadri Vural, William E. Kleinhans, T. Liu, Gregory H. Olsen, and Marshall J. Cohen "Attainment of high D* at room temperature via gate-modulated detector interface", Proc. SPIE 2745, Infrared Readout Electronics III, (26 June 1996); https://doi.org/10.1117/12.243538
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