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17 June 1996 Fabrication and characteristics of long-wavelength infrared planar photodiodes on molecular beam epitaxial p-HgCdTe films
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Abstract
The results of MBE growth of CdHgTe epilayers and fabrication of photosensitive in 8 - 10 mkm region small p-n junctions using planar technology are presented. During MBE epitaxy the growing dynamic, composition and surface roughness were controlled in situ using build in high energy electron diffractometer and ellipsometer. Small area photosensitive diodes (50 X 70 mkm) were fabricated using planar technology and annealing under anodic oxide film. The measurements of V-I, spectral response and noise characteristics showed that the photodiodes on MCT epilayers grown by MBE have an acceptable parameters for fabrication of the linear and 2D photodiode arrays.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Victor N. Ovsyuk, S. A. Studenikin, A. O. Suslyakov, N. Kh. Talipov, Vladimir V. Vasilyev, T. I. Zahariash, Yuri G. Sidorov, Sergey A. Dvoretsky, Nikolay N. Mikhailov, and Vasily S. Varavin "Fabrication and characteristics of long-wavelength infrared planar photodiodes on molecular beam epitaxial p-HgCdTe films", Proc. SPIE 2746, Infrared Detectors and Focal Plane Arrays IV, (17 June 1996); https://doi.org/10.1117/12.243041
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