17 June 1996 Fabrication and properties of two-dimensional hybrid array sensor on epitaxial n-InAs films
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Properties of n-epilayer InAs-SiO2 interface with various chemical treatments of InAs surface have been studied. Epilayer InAs films (Nd equals 1015 cm-3) of 5 - 7 micron thickness has been grown on n+-substrate with doping level 3.1018 cm-3. High quality properties of MIS-structures have been observed: surface state density < 1011 cm-2 eV-1, flat band voltage 2 - 5 V for SiO2 120 nm thickness. The array of photosensitive 128 X 128 MIS-structures with In2O3 gate has been mounted on silicon readout multiplexer by flip-chip method. The detectivity of InAs-cells in range of temperatures 80 - 100 K is more than 2(DOT)1012 cmHz1/2W-1.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Georgue L. Kurishev, Georgue L. Kurishev, A. P. Kovchavtzev, A. P. Kovchavtzev, V. M. Bazovkin, V. M. Bazovkin, I. M. Subbotin, I. M. Subbotin, I. M. Zakharov, I. M. Zakharov, Yu. A. Shlapunov, Yu. A. Shlapunov, L. S. Kogan, L. S. Kogan, A. V. Bekhterev, A. V. Bekhterev, } "Fabrication and properties of two-dimensional hybrid array sensor on epitaxial n-InAs films", Proc. SPIE 2746, Infrared Detectors and Focal Plane Arrays IV, (17 June 1996); doi: 10.1117/12.243049; https://doi.org/10.1117/12.243049


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