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17 June 1996 IR detector system based on high-Tc superconducting bolometer on Si membrane
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Abstract
An infrared detector system based on high-Tc superconducting (HTS) membrane bolometer is reported. Superconducting transition-edge bolometer has been manufactured by silicon micromachining using an epitaxial GdBa2Cu3O7-x film on an epitaxial yttria- stabilized zirconia buffer layer on silicon. The active area of the element is 0.85 X 0.85 mm2. The membrane thickness is 1 micrometers , those of the buffer layer and HTS films are 50 nm. The detectivity of bolometer, D*, is 3.8 X 109 cm Hz1/2 W-1 at 84.5 K and within the frequency regime 100 < f < 300 Hz. The optical response is 580 V/W at time constant 0.4 ms. This is one of the fastest composite type HTS-bolometer ever reported. The bolometer is mounted on a metal N2-liquid cryostat, which fits the preamplifier. With the volume of N2-reservoir being 0.1 liter, the cryostat holds nitrogen for about 8 hours. Using only wire heater with constant current, the temperature stability of about 0.03 K/h is achieved. The detector system can be used in IR- Fourier spectroscopy at wavelengths longer than the typical operating range of semiconductor detectors (wavelength greater than about 20 micrometers ).
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. Burnus, G. Hefle, T. Heidenblut, Igor A. Khrebtov, J. Laukemper, W. Michalke, Helmut Neff, B. Schwierzi, Olga K. Semtchinova, Erwin Steinbeiss, and A. D. Tkachenko "IR detector system based on high-Tc superconducting bolometer on Si membrane", Proc. SPIE 2746, Infrared Detectors and Focal Plane Arrays IV, (17 June 1996); https://doi.org/10.1117/12.243057
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