17 June 1996 Infrared photoconductors fabricated on Hg1-xCdxTe film grown by molecular beam epitaxy
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We used the heterostructures of HgCdTe/CdZnTe/GaAs grown by molecular beam epitaxy for fabrication of photoconductor devices. The composition of MCT films throughout the thickness was controlled in situ by ellipsometry during the growth process. There were wide band gap layers at the interface and at the surface of the MCT films for decreasing the surface recombination which strongly influences on devices characteristics. The use of n-type material for LWIR photoconductors (77 K, the cutoff wavelength is more than 13 mkm) with good performance was demonstrated. The detectivity in maximum of wavelength dependence varies in interval (1.5 divided by 5)(DOT)1010 cmHz1/2 W-1. P-type material was used for MWIR photoconductors that operated at room and near room temperatures with the close to the theoretical value detectivity.
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Victor N. Ovsyuk, Victor N. Ovsyuk, A. O. Suslyakov, A. O. Suslyakov, T. I. Zahariash, T. I. Zahariash, S. A. Studenikin, S. A. Studenikin, Vladimir V. Vasilyev, Vladimir V. Vasilyev, Yuri G. Sidorov, Yuri G. Sidorov, Sergey A. Dvoretsky, Sergey A. Dvoretsky, Vasily S. Varavin, Vasily S. Varavin, Nikolay N. Mikhailov, Nikolay N. Mikhailov, V. G. Liberman, V. G. Liberman, } "Infrared photoconductors fabricated on Hg1-xCdxTe film grown by molecular beam epitaxy", Proc. SPIE 2746, Infrared Detectors and Focal Plane Arrays IV, (17 June 1996); doi: 10.1117/12.243050; https://doi.org/10.1117/12.243050

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