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17 June 1996 Micromachined uncooled VO2-based IR bolometer arrays
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Abstract
Bulk silicon micromachined IR bolometer detectors operating at room temperature are presented. These devices are based on VO2 films typically exhibiting a thermal coefficient of resistance of the order of -3%/ degree(s)C. Detector sizes are 50 micrometers X 50 micrometers and 100 micrometers X 100 micrometers , and they are arranged in 1 X 64, 1 X 128 and 1 X 256 pixel linear arrays. A test bench for detector performance evaluation is described. The fabricated detectors exhibit responsivities of up to approximately 20,000 V/W, normalized detectivities typically exceeding 108 cmHz1/2 W-1, and response times typically below 20 ms, At 300 K and a frequency of 30 Hz, the noise equivalent temperature difference for these detectors is of the order of 3 X 10-2 degree(s)C. A bolometer simulation tool is also briefly described.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hubert Jerominek, Francis Picard, Nicholas R. Swart, Martin Renaud, Marc Levesque, Mario Lehoux, Jean-Sebastien Castonguay, Martin Pelletier, Ghislain Bilodeau, Danick Audet, Timothy D. Pope, and Philippe Lambert "Micromachined uncooled VO2-based IR bolometer arrays", Proc. SPIE 2746, Infrared Detectors and Focal Plane Arrays IV, (17 June 1996); https://doi.org/10.1117/12.243056
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