14 June 1996 Charge transfer in (In,Ga)As/(In,Al)As asymmetric double-multiple-quantum-well structures
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Abstract
We present the results of an experimental investigation of field-dependent space-charge build-up in (Ga,In)As/(Al,In)As asymmetric double quantum well structures. By using low- temperature photoluminescence spectroscopy, we have found that charge separation dramatically increases the magnitude of the applied field required to achieve resonance (and beyond) of the lowest allowed electron levels in the narrow and wide wells.
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Michael J. Hayduk, Michael J. Hayduk, Mark F. Krol, Mark F. Krol, Clifford R. Pollock, Clifford R. Pollock, } "Charge transfer in (In,Ga)As/(In,Al)As asymmetric double-multiple-quantum-well structures", Proc. SPIE 2749, Photonic Component Engineering and Applications, (14 June 1996); doi: 10.1117/12.243088; https://doi.org/10.1117/12.243088
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