Applications Of A Two-Wavelength Laser Scanner For Material/Device Characterization

B. L. Sopori

doi:10.1117/12.931688

30 April 1981 Applications Of A Two-Wavelength Laser Scanner For Material/Device Characterization

B. L. Sopori

Proceedings Volume 0276, Optical Characterization Techniques for Semiconductor Technology; (1981) https://doi.org/10.1117/12.931688
Event: 1981 Microlithography Conferences, 1981, San Jose, United States

Abstract

Applications of a two-wavelength laser scanner for evaluating spatial variations in several material/device parameters WI semiconductors are described. Use of two-wavelength scanning (λ = 1.15 pm and λ = 6328 A) permits excitation and collection of carriers from different depths below the surface of a semiconductor, thereby allowing separation of bulk and near surface (such as a surface junction) characteristics. These characteristics include minority carrier diffusion length, junction recombination, and local variations in photovoltaic effects caused by localized defects, twins and grain boundaries. Laser scanning may be done in two different modes. 1. Carrier generation and collection along the same direction -- in this mode the signal is related to carrier recombination effects. It is shown that the signal due to long wavelength excitation is proportional to the bulk diffusion length. Measurements may be done either on unprocessed substrates using a transparent electrode and capacitive coupling, or following P-N junction formation at the surface. 2. Carrier excitation and collection normal to each other -- this mode is used in unprocessed substrates (single or polycrystalline) to determine lateral variations in the internal fields arising from such effects as impurity inhomogeneities and grain boundaries.

Citation Download Citation

B. L. Sopori "Applications Of A Two-Wavelength Laser Scanner For Material/Device Characterization", Proc. SPIE 0276, Optical Characterization Techniques for Semiconductor Technology, (30 April 1981); https://doi.org/10.1117/12.931688

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KEYWORDS

Laser scanners

Semiconductors

Diodes

Photography

Diffusion

Polishing

Silicon

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