Infrared Localized Vibrational Mode Spectroscopy Of Carbon-Implanted GaAs

W. M. Theis; C. W. Litton; K. K. Bajaj

doi:10.1117/12.931695

30 April 1981 Infrared Localized Vibrational Mode Spectroscopy Of Carbon-Implanted GaAs

W. M. Theis, C. W. Litton, K. K. Bajaj

Proceedings Volume 0276, Optical Characterization Techniques for Semiconductor Technology; (1981) https://doi.org/10.1117/12.931695
Event: 1981 Microlithography Conferences, 1981, San Jose, United States

Abstract

The localized vibrational mode of ¹²C implanted into GaAs at 6 MeV and a fluence of 5xlO¹⁶ /cm² is studied as a function of annealing to 900°C. The feature sharpens and decreases in strength until 500°C and saturates thereafter. Electrical measurements indicate p-type behavior of the implant at 900°C, which is usual for implants of this nature.

Citation Download Citation

W. M. Theis, C. W. Litton, and K. K. Bajaj "Infrared Localized Vibrational Mode Spectroscopy Of Carbon-Implanted GaAs", Proc. SPIE 0276, Optical Characterization Techniques for Semiconductor Technology, (30 April 1981); https://doi.org/10.1117/12.931695

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