11 April 1996 DFWM reflectivity via two-photon free carrier generation in semiconductors in middle-IR range
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Abstract
It's shown that the effect of two-photon free carrier generation (TFCG) in semiconductors is the most promising for achieving high DFWM reflectivities R with short enough decay time tau in wavelength range from 1.5 to greater than 9.5 micrometers. The materials which allow us to achieve R up to 100% with tau of order of nanoseconds for the range of interest are presented. Some specific features of DFWM via TFCG were studied experimentally in InSb at lambda equals 10.6 micrometers and in Ge at lambda equals 2.94 micrometers.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. E. Vidavskii, A. E. Vidavskii, Valeri I. Kovalev, Valeri I. Kovalev, V. M. Raukhman, V. M. Raukhman, } "DFWM reflectivity via two-photon free carrier generation in semiconductors in middle-IR range", Proc. SPIE 2771, Laser Optics '95: Phase Conjugation and Adaptive Optics, (11 April 1996); doi: 10.1117/12.238051; https://doi.org/10.1117/12.238051
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