11 March 1996 Reactive laser ablation deposition of C-N films
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Proceedings Volume 2777, ALT'95 International Symposium on Advanced Materials for Optics and Optoelectronics; (1996) https://doi.org/10.1117/12.232208
Event: ALT '95 International Conference: Advanced Materials for Optics and Optoelectronics, 1995, Prague, Czech Republic
Abstract
We report a study of the characteristics of thin films deposited at room temperature on Si and KBr substrates by XeCl laser ablation of graphite in low pressure (0.25-2.5 mbar) nitrogen and ammonia atmospheres. Very hard films, with a very high electrical resistivity were obtained. The deposition rates decrease with increasing ambient pressure. N/C atomic ratios up to 0.6 were calculated from backscattering measurements. Different diagnostic techniques (XPS, IR absorption spectroscopy, etc.) demonstrate the formation of carbon nitride with a prevalent graphite-like structure. Films deposited in NH3 are thinner and present a lower quantity of N atoms bound to C atoms than films deposited in N2 at the same ambient pressure.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Gilberto Leggieri, Armando Luches, Alessio Perrone, S. Acquaviva, Rodica Alexandrescu, Ion N. Mihailescu, Joseph Zemek, Paolo Mengucci, "Reactive laser ablation deposition of C-N films", Proc. SPIE 2777, ALT'95 International Symposium on Advanced Materials for Optics and Optoelectronics, (11 March 1996); doi: 10.1117/12.232208; https://doi.org/10.1117/12.232208
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