Si/CaF<sub>2</sub> superlattices: a silicon light-emitting nanostructure

Stefano Ossicini; A. Fasolino; Fausto Bernardini; F. Arnaud d'Avitaya; L. Vervoort; F. Bassani

doi:10.1117/12.232223

11 March 1996 Si/CaF₂ superlattices: a silicon light-emitting nanostructure

Stefano Ossicini; A. Fasolino; Fausto Bernardini; F. Arnaud d'Avitaya; L. Vervoort; F. Bassani;

Author Affiliations +

Proceedings Volume 2777, ALT'95 International Symposium on Advanced Materials for Optics and Optoelectronics; (1996) https://doi.org/10.1117/12.232223
Event: ALT '95 International Conference: Advanced Materials for Optics and Optoelectronics, 1995, Prague, Czech Republic

Abstract

One promising approach for the development of silicon-based-light-emitting devices is the epitaxial growth of Si nanostructures. In this context, we propose the lattice matched system CaF₂/Si/CaF₂ as a prototype of a well controlled and ordered Si-based system with known microscopic structure. We present here a combined theoretical and experimental investigation of ultra-thin silicon (111) layers embedded in CaF₂. Our all electron calculation predicts the band gap opening and the presence of confined and interface states leading to a quasi-direct band gap. We have synthesized, by molecular beam epitaxy, Si/CaF₂ multilayers which efficiently photoluminesce at room temperature. The photoluminescence spectra show a strong resemblance to those of porous silicon. There is a critical dependence of the photoluminescence efficiency on the thickness of the Si layers and a blue shift for decreasing Si layers thickness. Our results allow us to conclude unambiguously that quantum confinement is a necessary condition for visible luminescence in our Si-based structures.

Citation Download Citation

Stefano Ossicini, A. Fasolino, Fausto Bernardini, F. Arnaud d'Avitaya, L. Vervoort, F. Bassani, "Si/CaF₂ superlattices: a silicon light-emitting nanostructure", Proc. SPIE 2777, ALT'95 International Symposium on Advanced Materials for Optics and Optoelectronics, (11 March 1996); doi: 10.1117/12.232223; https://doi.org/10.1117/12.232223

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