11 March 1996 Si/CaF2 superlattices: a silicon light-emitting nanostructure
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Proceedings Volume 2777, ALT'95 International Symposium on Advanced Materials for Optics and Optoelectronics; (1996) https://doi.org/10.1117/12.232223
Event: ALT '95 International Conference: Advanced Materials for Optics and Optoelectronics, 1995, Prague, Czech Republic
One promising approach for the development of silicon-based-light-emitting devices is the epitaxial growth of Si nanostructures. In this context, we propose the lattice matched system CaF2/Si/CaF2 as a prototype of a well controlled and ordered Si-based system with known microscopic structure. We present here a combined theoretical and experimental investigation of ultra-thin silicon (111) layers embedded in CaF2. Our all electron calculation predicts the band gap opening and the presence of confined and interface states leading to a quasi-direct band gap. We have synthesized, by molecular beam epitaxy, Si/CaF2 multilayers which efficiently photoluminesce at room temperature. The photoluminescence spectra show a strong resemblance to those of porous silicon. There is a critical dependence of the photoluminescence efficiency on the thickness of the Si layers and a blue shift for decreasing Si layers thickness. Our results allow us to conclude unambiguously that quantum confinement is a necessary condition for visible luminescence in our Si-based structures.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Stefano Ossicini, Stefano Ossicini, A. Fasolino, A. Fasolino, Fausto Bernardini, Fausto Bernardini, F. Arnaud d'Avitaya, F. Arnaud d'Avitaya, L. Vervoort, L. Vervoort, F. Bassani, F. Bassani, } "Si/CaF2 superlattices: a silicon light-emitting nanostructure", Proc. SPIE 2777, ALT'95 International Symposium on Advanced Materials for Optics and Optoelectronics, (11 March 1996); doi: 10.1117/12.232223; https://doi.org/10.1117/12.232223

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