1 September 1996 Modification of the resolution limits of the photolithographic process due to nonlinear optical propagation effects in the resist layers
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Proceedings Volume 2778, 17th Congress of the International Commission for Optics: Optics for Science and New Technology; 277806 (1996) https://doi.org/10.1117/12.2298888
Event: 17th Congress of the International Commission for Optics: Optics for Science and New Technology, 1996, Taejon, Korea, Republic of
Abstract
The basic limitations of optical lithography are characterized by the minimum resolvable feature size dmin = k1λ/NA and the depth of focus dfoc = k2λ/NA2, where λ is the wave- length of light and NA the numerical aperture of the projection system. The parameters k1 and k2 depend on the imaging technology. Typical production values are k1 ≥ 0.7 and 1 ≤ k2 ≤ 2. The upper formulas are commonly used for the evaluation of the imaging process in air. The projection of the image into optically linear resists only scales these formulas according to its refractive index.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. Erdmann, "Modification of the resolution limits of the photolithographic process due to nonlinear optical propagation effects in the resist layers", Proc. SPIE 2778, 17th Congress of the International Commission for Optics: Optics for Science and New Technology, 277806 (1 September 1996); doi: 10.1117/12.2298888; https://doi.org/10.1117/12.2298888
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