1 September 1996 Fabrication of 0.15 μm SOI p-MOSFETs using synchrotron radiation x-ray lithography
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Proceedings Volume 2778, 17th Congress of the International Commission for Optics: Optics for Science and New Technology; 277807 (1996) https://doi.org/10.1117/12.2298889
Event: 17th Congress of the International Commission for Optics: Optics for Science and New Technology, 1996, Taejon, Korea, Republic of
Abstract
0.15 μm SOI p-MOSFETs were fabricated by XRL (x-ray lithography) for gate and contact layer's patterning and optical lithography for other layers'.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sang Soo Choi, Sang Soo Choi, } "Fabrication of 0.15 μm SOI p-MOSFETs using synchrotron radiation x-ray lithography", Proc. SPIE 2778, 17th Congress of the International Commission for Optics: Optics for Science and New Technology, 277807 (1 September 1996); doi: 10.1117/12.2298889; https://doi.org/10.1117/12.2298889
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