1 September 1996 Optical properties of SiOxNy thin films prepared by ion beam assisted deposition
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Proceedings Volume 2778, 17th Congress of the International Commission for Optics: Optics for Science and New Technology; 27782V (1996) https://doi.org/10.1117/12.2298985
Event: 17th Congress of the International Commission for Optics: Optics for Science and New Technology, 1996, Taejon, Korea, Republic of
Abstract
Silicon oxynitride thin films were made by reactive ion beam assisted deposition. The refractive index of deposited films, determined by both envelope method and prism coupling method, was able to be varied from 1.46 of SiO2 to 1.97 of Si3N4 by controlling the stoichimetry. The packing density of silicon oxyniteride films was measured by the vacuum-to-air spectral shift and water absorption band.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hyun Ju Cho, "Optical properties of SiOxNy thin films prepared by ion beam assisted deposition", Proc. SPIE 2778, 17th Congress of the International Commission for Optics: Optics for Science and New Technology, 27782V (1 September 1996); doi: 10.1117/12.2298985; https://doi.org/10.1117/12.2298985
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