1 September 1996 Design and testing of a Rau-detector for examination of semiconductor devices in a scanning laser microscope
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Proceedings Volume 2778, 17th Congress of the International Commission for Optics: Optics for Science and New Technology; 27782X (1996) https://doi.org/10.1117/12.2298987
Event: 17th Congress of the International Commission for Optics: Optics for Science and New Technology, 1996, Taejon, Korea, Republic of
Abstract
Using the Scanning Laser Microscope (SLM) together with the OBIC-method (Optical Beam Induced Current) one can localize pn junctions and crystal defects as well as measure diffusion lengths, space charge regions, life time and surface recombination of charge carriers in semiconductor devices.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. Kienle, "Design and testing of a Rau-detector for examination of semiconductor devices in a scanning laser microscope", Proc. SPIE 2778, 17th Congress of the International Commission for Optics: Optics for Science and New Technology, 27782X (1 September 1996); doi: 10.1117/12.2298987; https://doi.org/10.1117/12.2298987
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