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In the paper, described systematically are the primary principles, computer simulation and photolithographic exposure experiments of phase-shifting mask (PSM) technology. The results of PSM computer simulation and exposure are given. The research shows that with PSMs resolution and process latitude can not be markedly improved unless some critical parameter requirements are satisfied. By use of a 10 × reduction g-line step-and-repeat stepper and chromeless PSM, clear photoresist patterns of 0.2 μm are achived. It is also shown that PSM technology has the excellent properties in resolution improvement, extending lifetime of optical microlithography and further developing the photolithography resolution limit.
Boru Feng
"Optical microlithographic phase-shifting mask technology", Proc. SPIE 2778, 17th Congress of the International Commission for Optics: Optics for Science and New Technology, 27783C (1 September 1996); https://doi.org/10.1117/12.2299002
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Boru Feng, "Optical microlithographic phase-shifting mask technology," Proc. SPIE 2778, 17th Congress of the International Commission for Optics: Optics for Science and New Technology, 27783C (1 September 1996); https://doi.org/10.1117/12.2299002