1 September 1996 Optical microlithographic phase-shifting mask technology
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Proceedings Volume 2778, 17th Congress of the International Commission for Optics: Optics for Science and New Technology; 27783C (1996) https://doi.org/10.1117/12.2299002
Event: 17th Congress of the International Commission for Optics: Optics for Science and New Technology, 1996, Taejon, Korea, Republic of
Abstract
In the paper, described systematically are the primary principles, computer simulation and photolithographic exposure experiments of phase-shifting mask (PSM) technology. The results of PSM computer simulation and exposure are given. The research shows that with PSMs resolution and process latitude can not be markedly improved unless some critical parameter requirements are satisfied. By use of a 10 × reduction g-line step-and-repeat stepper and chromeless PSM, clear photoresist patterns of 0.2 μm are achived. It is also shown that PSM technology has the excellent properties in resolution improvement, extending lifetime of optical microlithography and further developing the photolithography resolution limit.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Boru Feng, Boru Feng, } "Optical microlithographic phase-shifting mask technology", Proc. SPIE 2778, 17th Congress of the International Commission for Optics: Optics for Science and New Technology, 27783C (1 September 1996); doi: 10.1117/12.2299002; https://doi.org/10.1117/12.2299002
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