1 September 1996 Far infrared optical study of CdInGaS4, HgInGaS4 and CdIn2S2Se2 crystals
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Proceedings Volume 2778, 17th Congress of the International Commission for Optics: Optics for Science and New Technology; 27784P (1996) https://doi.org/10.1117/12.2299052
Event: 17th Congress of the International Commission for Optics: Optics for Science and New Technology, 1996, Taejon, Korea, Republic of
Abstract
The infrared reflectivity spectra in the range from 50 to 4000cm-1 of the CdInGaS4, CdIn2S4, HgInGaS4 and CdIn2S2Se2 crystals have been investigated. The fundamental phonon parameters, the limiting dielectric constants εo and ε and the reflectivity spectrum contours have been calculated using classical dispersion relations. The values of parameters obtained from the fitting procedure are listed in the table. It is shown, that the replacement of an anion (In by Ga) leads to appearance of additional vibrational mode caused by dynamics of Ga-S molecules.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
N. N. Syrbu, N. N. Syrbu, "Far infrared optical study of CdInGaS4, HgInGaS4 and CdIn2S2Se2 crystals", Proc. SPIE 2778, 17th Congress of the International Commission for Optics: Optics for Science and New Technology, 27784P (1 September 1996); doi: 10.1117/12.2299052; https://doi.org/10.1117/12.2299052
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