1 September 1996 Limitations of hook method in measuring sputtered atomic density in a processing plasma
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Proceedings Volume 2778, 17th Congress of the International Commission for Optics: Optics for Science and New Technology; 27785R (1996) https://doi.org/10.1117/12.2299090
Event: 17th Congress of the International Commission for Optics: Optics for Science and New Technology, 1996, Taejon, Korea, Republic of
Abstract
The reliable measurement of plasma parameters such as sputtered atomic den- sity in processing plasmas is necessary to understand the fundamental physics of such plasmas and their relation to characteristics of deposited thin films. Hook interferometry is used to measure sputtered copper atomic density in a cylindrical sputtering magnetron discharge. Absolute densities have been successfully obtained as a function of radial position with small spatial density gradient. This paper will describe the application of Fourier transform techniques to analyse hook inter- ferograms and compare the limitations in measuring the atomic density with the conventional hook analysis method.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
H. J. Kim, "Limitations of hook method in measuring sputtered atomic density in a processing plasma", Proc. SPIE 2778, 17th Congress of the International Commission for Optics: Optics for Science and New Technology, 27785R (1 September 1996); doi: 10.1117/12.2299090; https://doi.org/10.1117/12.2299090
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