Excitonic transitions in GaN epitayer layers grown by MOCVD

Guangde Chen

doi:10.1117/12.2316000

1 September 1996 Excitonic transitions in GaN epitayer layers grown by MOCVD

Guangde Chen

Proceedings Volume 2778, 17th Congress of the International Commission for Optics: Optics for Science and New Technology; 27788N (1996) https://doi.org/10.1117/12.2316000
Event: 17th Congress of the International Commission for Optics: Optics for Science and New Technology, 1996, Taejon, Korea, Republic of

Abstract

Optical transitions including free-and impurity-bound excitors in both n and p-type GaN epitaxial layers grown by MOCVD have been studied by time- resolved photoluminescence measurements. The radiative recombination lifetimes of the free excitions and excitons bound to neutral donors and acceptors in GaN have been obtained.

Citation Download Citation

Guangde Chen "Excitonic transitions in GaN epitayer layers grown by MOCVD", Proc. SPIE 2778, 17th Congress of the International Commission for Optics: Optics for Science and New Technology, 27788N (1 September 1996); https://doi.org/10.1117/12.2316000

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