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1 September 1996 Resonant and nonresonant ultrafast processes in semiconductor doped glasses
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Proceedings Volume 2778, 17th Congress of the International Commission for Optics: Optics for Science and New Technology; 2778A4 (1996) https://doi.org/10.1117/12.2316053
Event: 17th Congress of the International Commission for Optics: Optics for Science and New Technology, 1996, Taejon, Korea, Republic of
Abstract
We review studies of resonant and nonresonant ultrafast optical processes in semiconductor doped glasses. First we discuss measurements done in CdTe quantum-dots in glass, excited resonantly. In this case we observe a fast recombination, that depends on the size of the quantum-dot. For the smallest dots, with 3.1 nm average radius, the recovery time constant was found to be 360 fs. Then we describe the observation of the Optical Stark shift in CdSxSe1-x semiconductor-doped glass (SDG) excited under nonresonant below gap condition. An ultrafast and pure light-induced shift of the band edge is observed. For a pump intensity of 3 GW/cm2 the band shifts by 11 meV. The time response of the shift tracks the profile of the pumping pulse.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Carlos H. Brito Cruz "Resonant and nonresonant ultrafast processes in semiconductor doped glasses", Proc. SPIE 2778, 17th Congress of the International Commission for Optics: Optics for Science and New Technology, 2778A4 (1 September 1996); https://doi.org/10.1117/12.2316053
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