Paper
1 September 1996 Anisotropy of nonlinear absorption in a V3+:YAG crystal
N. N. Il'ichev
Author Affiliations +
Proceedings Volume 2778, 17th Congress of the International Commission for Optics: Optics for Science and New Technology; 2778AQ (1996) https://doi.org/10.1117/12.2316075
Event: 17th Congress of the International Commission for Optics: Optics for Science and New Technology, 1996, Taejon, Korea, Republic of
Abstract
Impurity-activated V3+:YAG crystals are used as passive laser switches in near-infrared lasers [1-3]. The phototropic properties of these crystals are due to the presence of wide additional-absorption (AA) bands with maxima near 0.8 and 1.3 μm. This additional absorption becomes saturated even at a low energy density of the incident radiation. For example, the absorption cross section for the λ≈1.3 pin band is ∝10-18 cm2 [2]. The AA bands are due to the V3+ ions in the YAG crystal matrix, which have the tetrahedral coordination of the garnet lattice ligands.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
N. N. Il'ichev "Anisotropy of nonlinear absorption in a V3+:YAG crystal", Proc. SPIE 2778, 17th Congress of the International Commission for Optics: Optics for Science and New Technology, 2778AQ (1 September 1996); https://doi.org/10.1117/12.2316075
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KEYWORDS
Crystals

Nonlinear crystals

Polarization

Absorption

Laser crystals

YAG lasers

Anisotropy

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