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1 September 1996 Enhanced doubling of GaAlAs diode laser in LiIO3 crystal
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Proceedings Volume 2778, 17th Congress of the International Commission for Optics: Optics for Science and New Technology; 2778B7 (1996) https://doi.org/10.1117/12.2316092
Event: 17th Congress of the International Commission for Optics: Optics for Science and New Technology, 1996, Taejon, Korea, Republic of
Abstract
The second harmonic of the 794 nm output of a GaAlAs diode laser is obtained in an external ring enhancement cavity. The dependence of the second harmonic power on the input power has been measured and compared with the theory. The second harmonic power of 4.2 μW at 397 nm has been obtained with an input fundamental power of 20 mW by using an 10-mm-long LiIO3 crystal.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kwang Hoon Jeong "Enhanced doubling of GaAlAs diode laser in LiIO3 crystal", Proc. SPIE 2778, 17th Congress of the International Commission for Optics: Optics for Science and New Technology, 2778B7 (1 September 1996); https://doi.org/10.1117/12.2316092
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