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1 September 1996 Photovoltaic edge-effect in planar GaAs MESFETs
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Proceedings Volume 2778, 17th Congress of the International Commission for Optics: Optics for Science and New Technology; 2778CV (1996) https://doi.org/10.1117/12.2316152
Event: 17th Congress of the International Commission for Optics: Optics for Science and New Technology, 1996, Taejon, Korea, Republic of
Abstract
A significant new internal gain effect, in planar MESFETs has been discovered which we call the "photovoltaic self-biasing edge-effect." The edge-effect can be exploited to attain up to a factor of ten improvement in detector photosensitivity.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
D. Abbott "Photovoltaic edge-effect in planar GaAs MESFETs", Proc. SPIE 2778, 17th Congress of the International Commission for Optics: Optics for Science and New Technology, 2778CV (1 September 1996); https://doi.org/10.1117/12.2316152
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