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26 April 1996 Application of ionized cluster beam (ICB) deposition
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Abstract
The design and testing of a new two-temperature metal vapor source for ionized cluster beam (ICB) method are described. The vaporized materials (Ag, atoms and clusters) from a crucible with vapor superheating is partially ionized by electrons at the crucible exit where the vapor has its highest density then accelerated in electric field (5 divided by 10 keV) and deposited on substrate of HTSC Y-Ba-Cu-O films. Very thin (100 divided by 200 nm) metal films with high density and low-resistance contacts Ag/Y-Ba-Cu-O (10-5 divided by 10-8 Ohm(DOT)cm2) were fabricated by ICB. The surface of the films was analyzed by SEM (SE, BSE) with computer analyzer. The application of two-temperature sources in technologies allows one to produce atomic or cluster beams, control the gas dynamic flow and product high-quality metal thin films as a result.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Alexander Stepanovich Zolkin "Application of ionized cluster beam (ICB) deposition", Proc. SPIE 2779, 3rd International Conference on Intelligent Materials and 3rd European Conference on Smart Structures and Materials, (26 April 1996); https://doi.org/10.1117/12.237052
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