Direct formation of GaAs quantum dot structure by droplet epitaxy

Nobuyuki Koguchi; Keiko Ishige

doi:10.1117/12.237054

26 April 1996 Direct formation of GaAs quantum dot structure by droplet epitaxy

Nobuyuki Koguchi, Keiko Ishige

Proceedings Volume 2779, 3rd International Conference on Intelligent Materials and 3rd European Conference on Smart Structures and Materials; (1996) https://doi.org/10.1117/12.237054
Event: 3rd International Conference on Intelligent Materials, 1996, Lyon, France

Abstract

Numerous GaAs epitaxial microcrystals were fabricated on a sulfur-terminated GaAs substrate by sequentially supplying Ga and As molecular beam. The process consists of forming Ga droplets on the inert surface and reacting the droplets with As to produce GaAs microcrystals. This method termed droplet epitaxy is thought to be a promising growth method for fabricating the GaAs quantum dot structure, especially coupled quantum dot structure.

Citation Download Citation

Nobuyuki Koguchi and Keiko Ishige "Direct formation of GaAs quantum dot structure by droplet epitaxy", Proc. SPIE 2779, 3rd International Conference on Intelligent Materials and 3rd European Conference on Smart Structures and Materials, (26 April 1996); https://doi.org/10.1117/12.237054

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available