26 April 1996 Direct formation of GaAs quantum dot structure by droplet epitaxy
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Abstract
Numerous GaAs epitaxial microcrystals were fabricated on a sulfur-terminated GaAs substrate by sequentially supplying Ga and As molecular beam. The process consists of forming Ga droplets on the inert surface and reacting the droplets with As to produce GaAs microcrystals. This method termed droplet epitaxy is thought to be a promising growth method for fabricating the GaAs quantum dot structure, especially coupled quantum dot structure.
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Nobuyuki Koguchi, Nobuyuki Koguchi, Keiko Ishige, Keiko Ishige, } "Direct formation of GaAs quantum dot structure by droplet epitaxy", Proc. SPIE 2779, 3rd International Conference on Intelligent Materials and 3rd European Conference on Smart Structures and Materials, (26 April 1996); doi: 10.1117/12.237054; https://doi.org/10.1117/12.237054
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