26 April 1996 Effects of double Schottky barrier on the electric properties of ceramic semiconductors
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Abstract
Effects of the interface states at the grain boundaries on the applied voltage dependence of the double Schottky barrier (DSB) are theoretically discussed. Based on the simplified models of rectangular density distributions for the interface states, effects of the energy level, density of states, and the distribution width of the interface states are quantitatively calculated. The I-V characteristics of DSB's are also calculated and the nonlinear I-V relations are discussed. The nonlinear exponent (alpha) of the I-V relation was found to be determined mainly by the barrier height and the total charge of the interface states. The observed ICTS spectra and other electric properties of ZnO varistors and PTC thermistors are discussed on the basis of the above DSB model.
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Kazuo Mukae, Kazuo Mukae, Koichi Tsuda, Koichi Tsuda, Akinori Tanaka, Akinori Tanaka, } "Effects of double Schottky barrier on the electric properties of ceramic semiconductors", Proc. SPIE 2779, 3rd International Conference on Intelligent Materials and 3rd European Conference on Smart Structures and Materials, (26 April 1996); doi: 10.1117/12.237068; https://doi.org/10.1117/12.237068
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