26 April 1996 Investigations on porous silicon layers with regard to chemical microsensor applications
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Abstract
A new concept for silicon microsensors based on porous EIS (Electrolyte-Insulator- Semiconductor) structures is presented. The porous sensor was prepared by anodic etching of n-doped silicon and subsequent deposition of a dielectric layer of SiO2. Experimental conditions were investigated to realize a well-defined macroporous formation of the porous silicon. To compare the chemical sensor properties with similar built-up planar Si/SiO2 structures, C/V (Capacitance-Voltage) measurements have been performed. The porous EIS structures have been characterized by SEM (Scanning Electron Microscopy), XPS (X-ray Photoelectron Spectroscopy) and cyclic voltammetry. This solid-state technology allows the preparation of transducer materials for pH microsensors.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Michael J. Schoening, Michael J. Schoening, M. Crott, M. Crott, F. Ronkel, F. Ronkel, M. Thust, M. Thust, J. Walter Schultze, J. Walter Schultze, Peter Kordos, Peter Kordos, Hans Luth, Hans Luth, } "Investigations on porous silicon layers with regard to chemical microsensor applications", Proc. SPIE 2779, 3rd International Conference on Intelligent Materials and 3rd European Conference on Smart Structures and Materials, (26 April 1996); doi: 10.1117/12.237125; https://doi.org/10.1117/12.237125
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