26 April 1996 Micro-Hall magnetic sensors with high magnetic sensitivity based on III-V heterostructures
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In this work, we propose solutions based on engineering of III-V heterostructures to develop new types of semiconductor magnetic sensors. These micro-Hall sensors use the properties of a 2D electron gas and the benefit of pseudomorphic material, in which both the alloy composition and the built-in strain offer additional degrees of freedom for band structure tailoring, to exhibit high magnetic sensitivity, good linearity, low temperature coefficient and high resolution. With the growth optimization which is described, two pseudomorphic In0.75Ga0.25As/In0.52Al0.48As heterostructures were grown on a semi- insulating InP substrate by molecular beam epitaxy. To understand better the influence of the heterostructure design on its electronic properties, a model involving the self-consistent solution of the Poisson and Schrodinger equations using the Fermi-Dirac statistics has been developed. These results have been used to optimize the structure design. A magnetic sensitivity of 346 V/AT with a temperature coefficient of -230 ppm/ degree(s)C between -80 degree(s)C and 85 degree(s)C has been obtained. The device show good linearity against magnetic field and also against the supply current. High signal-to-noise ratios corresponding to minimal magnetic field of 350 nT/Hz1/2 at 100 Hz and 120 nT/Hz1/2 at 1 kHz have been measured.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S. Del Medico, S. Del Medico, Taha Benyattou, Taha Benyattou, Gerard Guillot, Gerard Guillot, T. Venet, T. Venet, Michel Gendry, Michel Gendry, Jacques Tardy, Jacques Tardy, Alain Chovet, Alain Chovet, } "Micro-Hall magnetic sensors with high magnetic sensitivity based on III-V heterostructures", Proc. SPIE 2779, 3rd International Conference on Intelligent Materials and 3rd European Conference on Smart Structures and Materials, (26 April 1996); doi: 10.1117/12.237127; https://doi.org/10.1117/12.237127

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