Pinning-controlled metal/semiconductor interfaces

Seiichi Hara; Taishi Teraji; H. Okushi; Koji Kajimura

doi:10.1117/12.237058

26 April 1996 Pinning-controlled metal/semiconductor interfaces

Seiichi Hara, Taishi Teraji, H. Okushi, Koji Kajimura

Proceedings Volume 2779, 3rd International Conference on Intelligent Materials and 3rd European Conference on Smart Structures and Materials; (1996) https://doi.org/10.1117/12.237058
Event: 3rd International Conference on Intelligent Materials, 1996, Lyon, France

Abstract

We propose a new systematical method to control Schottky barrier heights of metal/semiconductor interfaces by controlling the density of the interface electronic states and the number of charges in the states. The density of interface states is controlled by changing the density of surface electronic states, which is controlled by hydrogenation. We apply an establishing hydrogen termination technique for the hydrogenation using a chemical solution, pH controlled buffered HF or hot water. The density of interface charges is changeable by controlling a metal work function. When the density of interface states is completely hydrogenated, the barrier height is determined simply by the difference between a work function of a metal (phi) _m and an electron affinity of a semiconductor (chi) _s. In such an interface with zero density of interface states, an Ohmic contact with a zero barrier height is formed when we select a metal with (phi) _m < (chi) _s. We have already demonstrated controlling Schottky and Ohmic properties by changing the hydrogenation on silicon carbide (0001) surfaces.

Citation Download Citation

Seiichi Hara, Taishi Teraji, H. Okushi, and Koji Kajimura "Pinning-controlled metal/semiconductor interfaces", Proc. SPIE 2779, 3rd International Conference on Intelligent Materials and 3rd European Conference on Smart Structures and Materials, (26 April 1996); https://doi.org/10.1117/12.237058

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