26 April 1996 Self-controlled material processing
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Abstract
Recently material processing with intiligency has been interested. Self-formation and alignment of quatum dots structure on semiconductor surface are a typical example. In this case no lithgraphic technique which is conventionally used for fabricating such a ultra fine structure is necessary. Another typical intelligent material processing is atomic layer manipulation with self-limiting process in which exact one monolayer layer-by-layer stacking or etching is automatically achieved. Atomic layer manipulation - layer-by-layer addition (Atomic layer epitaxy) and/or subtraction (Atomic layer etching) of atomic layer of a crystal - is a promising technology for future nano-device fabrication. In atomic layer manipulation, a source gas or an etching gas is alternatively fed into a reactor and self-limiting mechanism is realized. In self-limiting mechanism, source gas or etchantrecognizes automaticallyan one molecularlayer addition or subtraction of crystal and the growth or etching is automatically stopped just after one molecular layer addition or subtraction of the crystal.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yoshinobu Aoyagi, "Self-controlled material processing", Proc. SPIE 2779, 3rd International Conference on Intelligent Materials and 3rd European Conference on Smart Structures and Materials, (26 April 1996); doi: 10.1117/12.237048; https://doi.org/10.1117/12.237048
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