Conductivity measurement of GaAs layers after oxygen ion bombardment

Zdzistaw Synowiec; A. Romanowski; Maria Dabrowska-Szata

doi:10.1117/12.238148

8 April 1996 Conductivity measurement of GaAs layers after oxygen ion bombardment

Zdzistaw Synowiec, A. Romanowski, Maria Dabrowska-Szata

Proceedings Volume 2780, Metal/Nonmetal Microsystems: Physics, Technology, and Applications; (1996) https://doi.org/10.1117/12.238148
Event: Metal/Nonmetal Microsystems: Physics, Technology, and Applications, 1995, Polanica Zdroj, Poland

Abstract

The GaAs layers of a thickness of 200 nm and donor concentration of about 10¹⁸ cm^-3 were bombarded by 0⁺ ions with doses above 10¹³ cm^-2 at the energies of 125, 150, and 250 keV. The dc and ac conductivities of GaAs layers at the temperatures of 77 - 330 K were investigated. The dc measurements of the resistivity as at function of temperature indicate the following relationship: ln(rho) approximately equals T^-1/4. It confirms the variable-range of hopping conductivity. The ac conductivity measurements of GaAs layers in the frequency range of 15 Hz - 30 kHz show the dependence of an activation energy on trap emissivity according to the formulae e approximately equals exp(-E_a/kT). The values of an activation energy calculated from the slope of Arhenius line is of 75.06 meV.

Citation Download Citation

Zdzistaw Synowiec, A. Romanowski, and Maria Dabrowska-Szata "Conductivity measurement of GaAs layers after oxygen ion bombardment", Proc. SPIE 2780, Metal/Nonmetal Microsystems: Physics, Technology, and Applications, (8 April 1996); https://doi.org/10.1117/12.238148

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